Materials Today 2008, 11:30–38.CrossRef 2. Scappucci G, Capellini G, Klesse WM, Simmons MY: Dual-temperature encapsulation of phosphorus in germanium δ‐layers toward ultra-shallow junctions. J Cryst Growth 2011, 316:81–84. 10.1016/j.jcrysgro.2010.12.046CrossRef 3. Shang H, Frank MM, Gusev EP, Chu JO, Bedell SW, Guarini KW, Ieong M: Germanium channel MOSFETs: opportunities and challenges. IBM J Res Dev 2006, 50:377–386.CrossRef 4. Bulusu A, Walker DG: Quantum modeling of thermoelectric

performance of strained Si∕Ge∕Si superlattices using the nonequilibrium Green’s function method. J Appl Phys 2007, 102:073713. 10.1063/1.2787162CrossRef 5. Chan C, Zhang X, Cui Y: High capacity Li ion battery anodes using Ge nanowires. Nano Lett 2007, 8:307–309.CrossRef 6. Lewis N: Toward cost-effective solar energy use. Science (New York, NY) 2007, 315:798–801. 10.1126/science.1137014CrossRef VX-770 concentration 7. Nguyen P, Ng HT, Meyyappan M: Catalyst metal selection

for synthesis of inorganic nanowires. Adv Mater 2005, 17:1773–1777. 10.1002/adma.200401717CrossRef 8. Wang N, Cai Y, Zhang RQ: Growth of nanowires. Mater Sci Eng: R: Reports 2008, 60:1–51. 10.1016/j.mser.2008.01.001CrossRef Selleckchem Palbociclib 9. Marcus C, Berbezier I, Ronda A, Alonso I, Garriga M, Goñi A, Gomes E, Favre L, Delobbe A, Sudraud P: In-plane epitaxial growth of self-assembled Ge nanowires on Si substrates patterned by a focused ion beam. Cryst Growth Des 2011, 11:3190–3197. 10.1021/cg200433rCrossRef 10. Bansen R, Schmidtbauer J, Gurke R, Teubner T, Heimburger R, Boeck T: Ge in-plane nanowires grown by MBE: influence of surface treatment. Cryst Eng Comm 2013, 15:3478–3483. 10.1039/c3ce27047eCrossRef 11. Zandvliet H: The Ge(001) surface. Phys Rep 2003, 388:1–40. 10.1016/j.physrep.2003.09.001CrossRef 12. Stekolnikov AA, Furthmüller J, Bechstedt F: Absolute surface energies of group-IV semiconductors: dependence on orientation and reconstruction. Phys Rev B 2002, 65:115318.CrossRef 13. Rastelli A, von Känel H: Surface evolution of faceted islands. Surf Sci 2002, 515:L493. 10.1016/S0039-6028(02)01998-2CrossRef very 14. Di Gaspare L, Fiorini P, Scappucci

G, Evangelisti F, Palange E: Defects in SiGe virtual substrates for high mobility electron gas. Mater Sci Eng B 2001, 80:36–40. 10.1016/S0921-5107(00)00581-XCrossRef 15. Bosi M, Attolini G, Ferrari C, Frigeri C, Rimada Herrera JC, Gombia E, Pelosi C, Peng RW: MOVPE growth of homoepitaxial germanium. J Cryst Growth 2008, 310:3282–3286. 10.1016/j.jcrysgro.2008.04.009CrossRef 16. Nause J, Nemeth B: Pressurized melt growth of ZnO boules. Semicond Sci Technol 2005, 20:S45. 10.1088/0268-1242/20/4/005CrossRef 17. Gago R, Vázquez L, Palomares FJ, Agulló-Rueda F, Vinnichenko M, Carcelén V, Olvera J, Plaza JL, Diéguez E: Self-organized surface nanopatterns on Cd(Zn)Te check details crystals induced by medium-energy ion beam sputtering. J Phys D Appl Phys 2013, 46:455302. 10.1088/0022-3727/46/45/455302CrossRef 18.