It can be observed that, under 2 W/cm2 laser irradiation, the

V CPD values change slightly for all the three samples, but they increase obviously when the laser intensity increase up to 4 W/cm2 and above. Also, the increase magnitude is different for the three types of NRs. The increase of V CPD with laser intensity is most significant for NR3, similar to the increase of trapped charges. Similar surface potential variation by photogenerated charges has been obtained by Kelvin potential force Cyclopamine supplier microscopy (KPFM) [26, 27]; it was declared that the positive (negative) shift in surface potential with laser corresponds to an increase in hole (electron) density. Thus, the positive shift in V CPD with laser intensity in our experiments can also be attributed to the increase of trapped hole density, which is consistent with the above results of selleck compound charge density. As V CPD equals to (ϕ tip − ϕ sample) / e, the results declare that the work function of Si NR decrease upon laser irradiation should be due to the photogenerated holes trapped in NRs. The reason why positive charging measured on n-type Si NRs is not very clear, and further studies are required to get a clear mechanism. find more The possible mechanism may be suggested to the tunneling of photogenerated electrons to the substrate and trapping the holes in the NRs. In previous studies on the photoionization of an individual CdSe nanocrystals [16, 28], it was

found that a significant fraction of nanocrystals was positively charged and it was attributed to the tunneling of the excited electrons into the substrate. They assumed that the hole tends to be localized in the nanocrystal, while the electron is much more delocalized, with a nonnegligible fraction of the electron density outside the nanocrystal. Another possibility arises from that the holes can be captured at Si-Si bonds according to the reaction ≡ Si-Si ≡ + h → ≡Si+ + · Si≡, as reported in reference [29]. By adopting the above viewpoint, it can be suggested that when Si NRs are irradiated, free charges are

photogenerated after dissociation of mafosfamide the excitons. Due to the tunneling of photoelectrons and/or capture of holes, the Si NRs would be positively charged. To see the dynamics of charging and decharging, the time evolution of the EFM phase shift with the laser ON and OFF is present in Figure 4a,b for NR2 and NR3, respectively. As the change of phase shift with laser irradiation is too small for NR1, it is not given here. When the laser is turned on, the EFM phase shifts of both NR2 and NR3 moves to the more negative values, and the signal follows a monotonic decay to a new equilibrium value, corresponding to the charge generation and trapping process. The experimental curves can be fitted with single exponential decay, as shown in the left insets in Figure 4, giving a time constant of 7.6 and 13.6 s for NR2 and NR3, respectively.