The finding of these mutations in this Brazilian population reflects the mixing process that occurred during its formation.”
“Objectives. This study assessed the effect of recombinant fibroblast growth
DMXAA manufacturer factor (FGF-2) on reimplanted teeth.
Study design. Premolars were reimplanted in dogs. Roots on the left side of the mandible were treated with FGF-2, whereas roots on right side served as controls. At 2, 4, or 8 weeks after treatment, animals were humanely killed and specimens collected and processed for histopathologic examination.
Results. After 2 weeks, proliferating cell nuclear antigen-positive cell ratios in the experimental group were significantly greater than those in the control group (P < .01). After 4 and 8 weeks, the experimental group showed formation of new cementum. Moreover, incidence of replacement resorption in the experimental group was significantly lower than that in the control group (P < .01).
Conclusion. The results indicate that FGF-2 promotes formation of new periodontal ligament and prevents ankylosis and root resorption following reimplantation of teeth. (Oral Surg Oral Med Oral Pathol Oral Radiol Endod 2010; 109: 142-148)”
“This study investigated the phase-change activities
on a gallium-doped indium oxide (Ga:InO) device that can be supplied with a constant heat flow via symmetric contact to a pair of rodlike heating elements. A device set/reset current of 0.8/18 mu A and resistance window of 2.6 x 10(5) to 10(7) ohm can be found on Ga:InO with a 6.2 mu m(2) device area and a thickness of 40 nm. Analysis of a log-log
plot Mocetinostat concentration revealed slopes of 1.07 +/- 0.01 and -1.12 +/- 0.03 that were found to correlate with the switching current and resistance change between the high-/low-value states of the Ga:InO device area, respectively. These observations Acadesine datasheet lead to the estimated energy densities of 1.77 +/- 0.11 pJ/mu m(3) and 7.26 +/- 0.44 pJ/mu m(3) required to initiate the set and reset process in Ga:InO, respectively. Through differential scanning calorimetry analysis and acceleration tests of the Ga:InO film and the device, an activation energy of similar to 1.275 +/- 0.005 eV was found, which corresponded to the high-/low-resistance state change. A data retention time of ten years was further estimated when the Ga: InO device is operated at 75 degrees C. According to the transmission electron microscopy analysis, these observations are correlated with an amorphous to cubic phase transition in In(2)O(3), which takes place at a crystallization temperature of 252 degrees C, and suggest that the phase-change activities originate from the Joule heating effect. (C) 2010 American Institute of Physics. [doi:10.1063/1.3494089]“
“Objectives. Bacterial metabolites demineralize dental hard tissues, and soluble factors lead to tertiary dentinogenesis in the area of the dentin-pulp complex.